View APM4350KPC-TRG_3870942.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 4 3 5 0 k p apm4350 handling code tem p erature range package code package code kp : kpak operating junction tem p erature range c : -55 to 150 c handling code tr : tape & reel assembly material l : lead free device g : halogen and lead free device apm4350 kp : apm4350 xxxxx xxxxx - date code assembly material f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n - c h a n n e l m o s f e t 3 0 v / 6 0 a , r d s ( o n ) = 7 . 5 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 1 1 . 5 m w ( t y p . ) @ v g s = 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n a v a l a n c h e r a t e d r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , o r d e c k t o p c o m p u t e r . n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . s s g s d d d d g d s s s d d d
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 2 a p m 4 3 5 0 k p a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage 30 v gss gate - source voltage 20 v t j maximum junction temperature 150 c t stg storage temperature range - 55 to 150 c i s diode continuous forward current t c =25 c 50 a t c =25 c 1 4 0 i d p 300 s pulse drain current tested t c =100 c 8 0 a mounted on large heat sink t c =25 c 60 i d continuous drain current t c =100 c 35 a t c =25 c 50 p d maximum power dissipation t c =100 c 20 w r q jc thermal resistance - junction to case 2.5 c /w mounted on pcb of 1in 2 pad area t a = 25 c 13.5 i d continuous drain current t a = 100 c 8.5 a t a = 25 c 2.5 p d maximum power dissipation t a = 100 c 1 w r q ja thermal resistance - junction to ambient 50 c /w mounted on pcb of minimum footprint t a = 25 c 10 i d continuo us drain current t a = 100 c 6 a t a = 25 c 1.5 p d maximum power dissipation t a = 100 c 0.5 w r q ja thermal resistance - junction to ambient 75 c /w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 3 a p m 4 3 5 0 k p e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 4350kp symbol parameter test condition s min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 30 v v ds =2 4 v, v gs =0v 1 i dss zero gate voltage drain current t j = 8 5 c 30 m a v gs(th) gate threshol d voltage v ds =v gs , i ds =250 m a 1.3 1.8 2.5 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds =30a 7.5 9 r ds(on) a drain - source on - state resistance v gs = 4. 5v, i ds =15a 11.5 14.5 m w diode characteristics v sd a diode forward voltage i sd =15a, v gs =0v 0.75 1.1 v t rr reverse recovery time 11 ns qrr reverse recovery charge i d s =15a, dl sd /dt = 100a/ m s 3 nc gate charge characteristics b q g total gate charge 28 39 q gs gate - source charge 4 q gd gate - drain charge v ds =1 5 v, v gs = 10 v, i d s =30a 9 nc dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.6 w c iss input capacitance 1660 c oss output capacitance 260 c rss reverse transfer capacitance v gs =0v, v ds =15v, f requency =1.0mhz 170 pf t d(on) turn - on delay time 18 33 t r turn - on rise time 15 28 t d(off) turn - off delay time 47 86 t f turn - off fall time v dd =1 5 v, r l =1 5 w , i d s =1a, v gen = 10v , r g =6 w 22 41 ns note ?g a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject t o production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 4 a p m 4 3 5 0 k p t y p i c a l c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) normalized transient thermal resistance 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 2 mounted on 1in 2 pad r q ja :50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 t c =25 o c 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 t c =25 o c,v g =10v 0.1 1 10 80 0.1 1 10 100 400 t c =25 o c 1ms 1s 10ms 100ms dc rds(on) limit
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 5 a p m 4 3 5 0 k p r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s g a t e - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 5.5v 4.5v 3.5v 4v 3v 5v v gs = 6,7,8,9,10v 0 20 40 60 80 100 120 2 4 6 8 10 12 14 16 18 20 v gs =10v v gs =4.5v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =250 m a 1 2 3 4 5 6 7 8 9 10 4 6 8 10 12 14 16 18 i d =30a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 6 a p m 4 3 5 0 k p v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.2 1 10 100 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 frequency=1mhz crss coss ciss -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 7.5m w v gs = 10v i ds = 30a 0 5 10 15 20 25 30 0 2 4 6 8 10 v ds = 15v i ds = 30a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 7 a p m 4 3 5 0 k p a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s dut 0.01 w tp v dd v ds l i l r g s w i t c h i n g t i m e t e s t c i r c u i t a n d w a v e f o r m s v dd r d dut v gs v d s r g tp t d (on) t r t d (off) t f v gs v ds 90% 10%
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 8 a p m 4 3 5 0 k p p a c k a g e i n f o r m a t i o n k p a k s y m b o l min. max. 1.20 0.38 4.80 5.00 5.90 6.10 5.70 5.80 0.05 3.49 3.69 a b d e e1 e f f1 g h millimeters c 0.19 0.25 1.27 bsc kpak 0.35 0.45 min. max. inches 0.047 0.015 0.050 bsc 0.007 0.010 0.189 0.197 0.232 0.240 0.224 0.228 0.002 0.014 0.018 0.137 0.145 1.00 0.039 0.51 0.020 0.15 0.006 g1 k 1.60 0.063 0.05 0.15 0.002 0.006 0.018 0.014 0.45 0.35 e 1 e f 1 g 1 g k f h b e d c a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 9 a p m 4 3 5 0 k p c a r r i e r t a p e & r e e l d i m e n s i o n s application a h t1 c d d w e1 f 330.0 ? 2.00 50 min. 12.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 12.0 ? 0.30 1.75 ? 0.10 5.5 ? 0.10 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 kpak 4.0 ? 0.10 8.0 ? 0.10 2.0 ? 0.10 1.5+0.10 - 0.00 1.5 min. 0.3 ? 0.05 6.5 ? 0.10 5 .3 ? 0.10 1.4 ? 0.10 d e v i c e s p e r u n i t package type unit quantity kpak tape & reel 2500 ( m m ) h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 0 a p m 4 3 5 0 k p r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b,a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles r e l i a b i l i t y t e s t p r o g r a m c l a s s i f i c a t i o n r e f l o w p r o f i l e s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j u l . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 1 a p m 4 3 5 0 k p c u s t o m e r s e r v i c e c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n . ) a n p e c e l e c t r o n i c s c o r p . head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan tel : 886-3-5642000 fax : 886-3-5642050 t a i p e i b r a n c h : 2 f , n o . 1 1 , l a n e 2 1 8 , s e c 2 j h o n g s i n g r d . , s i n d i a n c i t y , t a i p e i c o u n t y 2 3 1 4 6 , t a i w a n t e l : 8 8 6 - 2 - 2 9 1 0 - 3 8 3 8 f a x : 8 8 6 - 2 - 2 9 1 7 - 3 8 3 8 table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c

▲Up To Search▲

Price & Availability of APM4350KPC-TRG

	To Download APM4350KPC-TRG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .